Aluminum compatible thin-film resistor (TFR) and manufacturing methods

ABSTRACT

A method for manufacturing a thin film resistor (TFR) module in an integrated circuit (IC) structure may include forming a trench in a dielectric region; forming a TFR element in the trench, the TFR element including a laterally-extending TFR region and a TFR ridge extending upwardly from a laterally-extending TFR region; depositing at least one metal layer over the TFR element; and patterning the at least one metal layer and etching the at least one metal layer using a metal etch to define a pair of metal TFR heads over the TFR element, wherein the metal etch also removes at least a portion of the upwardly-extending TFR ridge. The method may also include forming at least one conductive TFR contact extending through the TFR element and in contact with a respective TFR head to thereby increase a conductive path between the respective TFR head and the TFR element.

RELATED PATENT APPLICATION

This application claims priority to commonly owned U.S. ProvisionalPatent Application No. 62/685,676 filed Jun. 15, 2018, the entirecontents of which are hereby incorporated by reference for all purposes.

TECHNICAL FIELD

The present disclosure relates to thin-film resistors (TFRs), inparticular to TFR modules compatible with aluminum interconnects (e.g.,aluminum TFR heads) and/or having increased area of metal-to-TFRconnection, and methods for manufacturing such TFR modules.

BACKGROUND

Semiconductor integrated circuits (IC) typically include metallizationlayers to connect various components of the IC, called interconnect, orback end of line (BEOL) elements. These metal layers are typicallyformed from copper or aluminum.

One known technique for forming copper interconnects on an IC is knownas additive patterning, sometimes called a damascene process, whichrefers to traditional metal inlaying techniques. A so-called damasceneprocess may include patterning dielectric materials, such as silicondioxide, or fluorosilicate glass (FSG), or organo-silicate glass (OSG)with open trenches where the copper or other metal conductors should be.A copper diffusion barrier layer (typically Ta, TaN, or a bi-layer ofboth) is deposited, followed by a deposited copper seed layer, followedby a bulk Copper fill, e.g., using an electro-chemical plating process.A chemical-mechanical planarization (CMP) process may then be used toremove any excessive copper and barrier, and may thus be referred to asa copper CMP process. The copper remaining in the trench functions as aconductor. A dielectric barrier layer, e.g., SiN or SiC, is thentypically deposited over the wafer to prevent copper corrosion andimprove device reliability.

With more features being packed into individual semiconductor chips,there is an increased need to pack passive components, such asresistors, into the circuits. Some resistors can be created through ionimplantation and diffusion, such as poly resistors. However, suchresistors typically have high variations in resistance value, and mayalso have resistance values that change drastically as a function oftemperature. A new way to construct integrated resistors, calledThin-Film Resistors (TFRs) has been introduced in the industry toimprove integrated resistor performance. Known TFRs are typically formedfrom SiCr (silicon-chromium), SiCCr (silicon-silicon carbide-chromium),TaN (tantalum nitride), NiCr (nickel-chromium), AlNiCr (aluminum-dopednickel-chromium), or TiNiCr (titanium-nickel-chromium), for example

Most typical TFR construction methods utilize two or more additionalphotomasks, which adds cost to the manufacturing process. In addition,some TFRs are not compatible with interconnects formed from particularmetals. For example, some TFRs or TFR manufacturing methods are notcompatible with copper interconnects, while other TFRs or TFRmanufacturing methods are not compatible with aluminum interconnects.

FIG. 1 shows a cross-sectional view of two example TFRs 10A and 10Bdevices implemented using conventional processes, which typicallyrequire three added mask layers. A first added mask layer is used tocreate the TFR heads 12A and 12B. A second added mask layer is used tocreate the TFRs 14A and 14B. A third added mask layer is used to createTFR vias 16A and 16B. As shown, TFRs 12A and 12B are formed across thetop and bottom of TFR heads 12A and 12B, respectively, but in each casethree added mask layers are typically required.

FIG. 2 shows a cross-sectional view of a known IC structure including anexample TFR 30 formed in view of the teachings of U.S. Pat. No.9,679,844, wherein TFR 30 can be created using a single added mask layerand damascene process, for copper back-end-of-line (BEOL) connection. ATFR film 34, in this example a SiCCr film, may be deposited intotrenches patterned into a previously processed semiconductor substrate.As shown, SiCCr film 34 is constructed as a resistor between conductive(e.g., copper) TFR heads 32, with an overlying dielectric regionincluding a dielectric layer 36 (e.g., SiN or SiC) and a dielectric capregion 38 (e.g., SiO2) formed over the SiCCr film 34. The IC structureincluding TFR 30 may be further processed for a typical Cu (copper)interconnect process (BEOL), e.g., next level of via and trench. TFR 30may be connected with other parts of the circuit using typical coppervias 40 connected to the copper TFR heads 32 for example.

BRIEF DESCRIPTION OF THE DRAWINGS

Example aspects of the present disclosure are described below inconjunction with the figures, in which:

FIG. 1 is a cross-sectional view of two example thin-film resistor (TFR)devices implemented using known processes;

FIG. 2 is a cross-sectional view of a known integrated circuit (IC)structure including an example TFR formed according to known techniques;

FIGS. 3A1-3A2 through 3I1-3I2 illustrate an example process for formingan example IC structure with an integrated TFR, according to one exampleembodiment; and

FIGS. 4A1-4A2 through 4J1-4J2 illustrate an example process for forminganother example IC structure with an integrated TFR, according toanother example embodiment.

SUMMARY

Embodiments of the present disclosure provide thin-film resistor (TFR)modules with aluminum TFR heads, i.e., aluminum back-end-of-line (BEOL)contact. Some embodiments provide methods for forming such TFR modulesusing one a single added mask layer.

In some embodiments, TFR element “ridges” that may negatively affect theTCR (temperature coefficient of resistance) or other performancecharacteristic of the TFR module may be partially or fully reduced oreliminated during a metal etch that forms the TFR heads (e.g., aluminumheads).

Some embodiments also provide conductive TFR contacts that increase thesurface contact area between the TFR heads (e.g., aluminum heads) andthe TFR element, to thereby increase the conductive path between the TFRheads via the TFR element, and thereby improve the performance of theTFR module, e.g., for high current applications.

DETAILED DESCRIPTION

Embodiments of the present disclosure provide thin-film resistor (TFR)modules providing various advantages with respect to existing TFRmodules, as discussed herein.

FIGS. 3A1-3A2 through 3I1-3I2 illustrate an example process for formingan example IC structure with an integrated TFR with aluminum heads,according to one example embodiment. Each pair of FIGS. 3n 1/3 n 2(e.g., figure pair 3A1/3A2, figure pair 3B1/3B2, etc.) shows a top viewand a cross-sectional side view, respectively, at a selected point inthe example process. The process may begin by forming a single-damasceneTFR structure as shown in FIGS. 3A-3C discussed below, e.g., using anyof the techniques disclosed in U.S. Pat. No. 9,679,844, the entirecontents of which are hereby incorporated by reference, followed by theformation of aluminum TFR heads over the TFR structure, as discussedbelow.

FIGS. 3A1 and 3A2 show the initial formation of an IC structure 100, byforming a dielectric layer 102 over an underlying structure 101, e.g.,including a substrate, field oxide, metal layer(s), IC devices, etc. Inone embodiment, dielectric layer 102 may comprise a pre-metal dielectric(PMD) layer or region. In one embodiment, the TFR may be formed in anIMD (inter-metal dielectric) after metal interconnects (metal lines)have been created. As shown, a TFR trench 104 may be formed bypatterning and etching the dielectric layer 102.

As shown in FIGS. 3B1 and 3B2, a layer of TFR material 110, alsoreferred to as a “TFR film,” may be deposited over the structure andextending into the TFR trench 104, followed by a dielectric cap layer112. In some embodiments, an anneal may be performed between thedeposition of TFR layer 110 and dielectric cap layer 112, as discussedbelow.

TFR layer 110 may comprise SiCr, SiCCr, TaN, NiCr, AlNiCr, TiNiCr, orany other suitable TFR material. TFR layer 110 may be deposited in anysuitable manner, e.g., using a PVD or sputter deposition process, withany suitable thickness, e.g., about 500 Å (e.g., 400 Å-600 Å). In someembodiments, the TFR layer thickness may be selected based on a targetsheet resistance, e.g., 500-1000 Ω/sq.

As mentioned above, in some embodiments, structure 100 including TFRlayer 110 may then be annealed, e.g., at a temperature of about 500° C.(e.g., 400° C.-600° C. or 450° C.-550° C.) for about 30 minutes (e.g.,20-60 min) to achieve 0 ppm or near 0 ppm TCR (temperature coefficientof resistance) of the TFR layer 110 or the resulting TFR module 115(discussed below). In some embodiments, “near 0” ppm TCR may include aTCR of 0±400 ppm/° C., or a TCR of 0±100 ppm/° C., or a TCR of 0±50ppm/° C., or a TCR of 0±20 ppm/° C., or a TCR of 0±10 ppm/° C.,depending on the particular embodiment. In some particular embodiments,TFR layer 110 or TFR module 115 may have a TCR of about 40 ppm/° C.,e.g., 40±30 ppm/° C., or 40±20 ppm/° C., or 40±10 ppm/° C., e.g., asdisclosed in U.S. provisional patent application No. 62/670,880 filedMay 14, 2018 (see, e.g., FIG. 10B and corresponding text), the entirecontents of which application are hereby incorporated by reference.

Dielectric cap layer 112 may then be deposited on structure 100, toprotect TFR film 110. In one embodiment, dielectric cap layer 112 maycomprise a SiN layer with a thickness of about 500 Å (e.g., 400 Å-600 Å)or about 750 Å (e.g., 600 Å-900 Å).

As shown in FIGS. 3C1 and 3C2, structure 100 may be further processed byperforming a CMP stopped at or in the dielectric cap layer 112 to removethe upper portions (i.e., outside the TFR trench 104) of TFR layer 110and dielectric cap layer 112, and thereby define the structure of a TFRmodule 114 having a formed TFR element 116. In some embodiments, the CMPis performed with a target remaining cap layer thickness (layer 112) ofabout 1000 Å (e.g., 500 Å-1500 Å).

As a result of the damascene construction, the TFR element 116 mayinclude ridges 118 at one or more edges of the TFR element 116,extending vertically upwardly from a horizontally-extending bottomregion 119 of the element 116 (formed in the bottom of the TFR trench).These ridges 118 may provide unwanted effects, e.g., regarding thetemperature coefficient of resistance (TCR) of the TFR module 115. Thus,as discussed below with reference to FIGS. 311, 312, one or more ofthese ridges 118 may be at least partially removed during a metal etchfor forming the aluminum TFR heads, to improve the performance (e.g.,improved TCR) of the TFR module. The height of TFR element ridges 118,indicated at “y”, may be defined by the depth of the TFR trench 104and/or the depth of penetration of the CMP performed in this step.

As shown in FIGS. 3D1 and 3D2, a photomask 120 may be formed on thestructure 100 and patterned to form at least one mask opening 122 forcreating at least one conductive device contact in the underlyingstructure. Mask opening 122 may be aligned over or adjacent a conductiveelement 140, e.g., a metal contact or interconnect, in the underlyingstructure 101, such that the subsequently formed device contact is incontact with the conductive element 140.

As shown in FIGS. 3E1 and 3E2, an etch may be performed through the maskopening 132 to create a contact opening 132 extending through thedielectric layer 102 and landing on or adjacent conductive element 140,and photomask 120 may be removed.

As shown in FIGS. 3F1 and 3F2, the contact opening 132 may be filledwith metal, e.g., tungsten, to define a device contact 152 in contactwith conductive element 140 in the underlying structure 101.

As shown in FIGS. 3G1 and 3G2, a metal layer or stack 160 may bedeposited over the TFR module 114 and device contact 153. Metal layer orstack 160 may define a metal-1 or M-1 layer. In some embodiments, metallayer or stack 160 may comprise aluminum. In the illustrated example,metal stack 160 includes a thin Ti or TiN layer deposited on thestructure, followed by a thick aluminum layer 164. In some embodiments afurther TiN layer may be deposited over the aluminum layer 164.

As shown in FIGS. 3H1 and 3H2, metal stack 160 may be patterned andetched using a suitable metal etch, to define (a) a pair of aluminum TFRheads 170A and 170B on opposing ends of the TFR module 114 and (b) analuminum contact 172 coupled to device contact 152. As shown in FIG.3H2, aluminum TFR heads 170A and 170B may contact thevertically-extending ridges 118 of TFR element 116, to thereby define aconductive path between TFR heads 170A and 170B via TFR element 116.

FIG. 3H2 also shows that the metal etch may remove a partial verticalthickness (or in another embodiment, a full thickness) of the TFRdielectric cap region 112.

FIGS. 3I1 and 3I2 show the structure at the same point in the process asFIGS. 3H1 and 3H2, but the cross-section shown in FIG. 3I2 is takenthrough one of the TFR element ridges 118, as opposed to thecross-section shown in FIG. 3H2 taken through an interior location ofTFR element 116. As shown in FIG. 3I2, the metal etch may also remove apartial or full thickness of the respective TFR element ridge 118 in the“y” direction, indicated at 118A, along a partial or full length of therespective TFR element ridge 118 in the “x” direction. In theillustrated embodiment, the TFR element ridge 118 shown in cross-sectionI-I (as well as the matching TFR element ridge 118 on the opposite sideof the TFR module 114) is reduced by the metal etch from a thickness y1to a reduced thickness y2, along the x-direction length of the ridge 118except for the portions 118B covered by aluminum TFR heads 170A and170B.

As discussed above, the TFR element ridges 118 may negatively affect thetemperature coefficient of resistance (TCR) of the TFR module 115. Thus,the reduction of the TFR element ridges 118 may improve the TCRperformance of TFR module 115.

FIGS. 4A1-4A2 through 4J1-4J2 illustrate an example process for formingan example IC structure with an integrated TFR with aluminum heads, andincluding TFR contacts for increasing the contact area between thealuminum TFR heads and the TFR element, according to one exampleembodiment. Each pair of FIGS. 4n 1/4 n 2 (e.g., figure pair 4A1/4A2,figure pair 4B1/4B2, etc.) shows a top view and a cross-sectional sideview, respectively, at a selected point in the example process. Theprocess may begin similar to the process of FIGS. 3A-3I discussed above.Thus, FIGS. 4A1-4C2 correspond with FIGS. 3A1-3C2, wherein elements 4 xxshown in FIGS. 4A1-4C2 correspond with elements 3 xx shown in FIGS.3A1-3C2.

FIGS. 4A1 and 4A2 show the initial formation of an IC structure 200, byforming a dielectric layer 202 over an underlying structure 201, e.g.,including a substrate, field oxide, metal layer(s), IC devices, etc.Underlying structure 201 may include suitable structures forsubsequently formed device contact(s) and/or TFR contact(s) to land on,e.g., as discussed below. In one embodiment, dielectric layer 202 maycomprise a pre-metal dielectric (PMD) layer or region. In oneembodiment, the TFR may be formed in an IMD (inter-metal dielectric)after metal interconnects (metal lines) have been created. As shown, aTFR trench 204 may be formed by patterning and etching the dielectriclayer 302.

As shown in FIGS. 4B1 and 4B2, a layer of TFR material, or TFR film, 210may be deposited over the structure and extending into the TFR trench204, followed by a dielectric cap layer 212. TFR layer 210 may compriseSiCr, SiCCr, TaN, NiCr, AlNiCr, TiNiCr, or any other suitable TFRmaterial. TFR layer 210 may be deposited in any suitable manner, e.g.,using a PVD or sputter deposition process, with any suitable thickness,e.g., about 500 Å (e.g., 400 Å-600 Å). In some embodiments, the TFRlayer thickness may be selected based on a target sheet resistance,e.g., 500-1000 Ω/sq. Dielectric cap layer 212 may deposited over TFRfilm 210 to protect TFR film 210. In one embodiment, dielectric caplayer 212 may comprise a SiN layer with a thickness of about 500 Å(e.g., 400 Å-600 Å) or about 750 Å (e.g., 600 Å-900 Å).

In some embodiments, an anneal may be performed between the depositionof TFR layer 210 and dielectric cap layer 212, e.g., to achieve adesired TCR (temperature coefficient of resistance) characteristic ofTFR layer 210, as discussed above regarding FIGS. 3B1, 3B2.

As shown in FIGS. 4C1 and 4C2, structure 200 may be further processed byperforming a CMP stopped at or in the dielectric cap layer 212 to removethe upper portions (i.e., outside the TFR trench 204) of TFR layer 210and dielectric cap layer 212, and thereby define the structure of a TFRmodule 214 having a formed TFR element 216. In some embodiments, the CMPis performed with a target remaining cap layer thickness (layer 212) ofabout 1000 Å (e.g., 500 Å-1500 Å).

As a result of the damascene construction, the TFR element 216 mayinclude ridges 218 at one or more edges of the TFR element 216,extending vertically upwardly from a horizontally-extending bottomregion 219 of the element 216 (formed in the bottom of the TFR trench).These ridges 218 may provide unwanted effects, e.g., regarding thetemperature coefficient of resistance (TCR) of the TFR module 215. Thus,as discussed below with reference to FIGS. 411, 412, one or more ofthese ridges 218 may be at least partially removed during a metal etchfor forming the aluminum TFR heads, to improve the performance (e.g.,improved TCR) of the TFR module. The height of TFR element ridges 218,indicated at “y”, may be defined by the depth of the TFR trench 204and/or the depth of penetration of the CMP performed in this step.

After processing shown in FIGS. 4C1, 4C2, the method may depart from themethod of FIGS. 3A-3I discussed above, in particular by the additionalformation of TFR contacts to increase the contact area between TFRelement 216 and subsequently formed TFR heads.

As shown in FIGS. 4D1 and 4D2, a photomask 220 may be formed on thestructure 200 and patterned to form (a) at least one first mask opening222 for creating at least one conductive device contact 252 (discussedbelow) in the underlying structure and (b) at least one second maskopening 224 for creating at least one TFR contact 254 (discussed below)for increasing the contact area between TFR element 216 and subsequentlyformed TFR heads. In this example, four second mask openings 224A-224Dare formed for creating four TFR contacts 254A-254D as discussed below.

Each first mask opening 222 may be aligned over or adjacent a respectiveconductive element 240, e.g., a metal contact or interconnect, in theunderlying structure 201, such that the subsequently formed devicecontact 252 is in contact with the conductive element 240. As shown inFIG. 4D1, each second mask opening 224 (in this example, each opening224A-224D) may be aligned over a TFR element ridge 218, such that eachsubsequently formed TFR contact 254A-254D penetrates a respective TFRelement ridge 218, as shown in subsequent figures and discussed below.In this example, mask opening 224 are located to form TFR contact 254extending through the TFR element ridges 218 at opposing longitudinalends of the TFR element 216. In other embodiments, one or more maskopening 224 may be located to form TFR contact 254 extending through anyone, two, three, or all four of the TFR element ridges 218 extendingaround the perimeter of TFR element 216.

In addition, second mask openings 224 may be aligned over an inert ornon-conductive region 242, e.g., an oxide or dummy poly layer or block,in the underlying structure 201, such that the subsequently formed TFRcontacts 254 may land on the an inert or non-conductive region 242. Inone embodiment, the TFR contact 254 may land on a conductive devicerequired to be connected to the TFR.

In some embodiments, each second mask opening 224 may have a circularshape; an elongated shape, e.g., an oval/ellipse (as shown in FIG. 4E1)or an elongated rectangle; or any other suitable shape. Using anelongated shape of openings 224 may increase the resulting contact areabetween TFR contacts 254 and TFR element 216 (e.g., at TFR ridge(s) 218and/or at TFR bottom region 291).

As shown in FIGS. 4E1 and 4E2, an etch may be performed through the maskopenings 232 and 234A-234D to create (a) a contact opening 232 extendingthrough dielectric layer 202 and landing on or adjacent conductiveelement 240, and (b) TFR contact openings 234A-234D extending throughdielectric layer 202 and landing on inert or non-conductive region 242.Photomask 220 may then be removed.

As shown in FIGS. 4F1 and 4F2, the contact opening 232 and 234A-234D maybe filled with metal, e.g., tungsten, to define (a) a device contact 252extending through dielectric layer 202 and contacting conductive element240 in the underlying structure 201 and (b) TFR contacts 254A-254Dextending through dielectric layer 202 and landing on inert ornon-conductive region 242. In one embodiment, the TFR contact 254 mayland on a conductive device required to be connected to the TFR.

As shown in FIGS. 4G1 and 4G2, a metal layer or stack 260 may bedeposited over the TFR module 214, TFR contacts 254, and device contact252. Metal layer or stack 260 may define a metal-1 or M-1 layer. In someembodiments, metal layer or stack 260 may comprise aluminum. In theillustrated example, metal stack 260 includes a thin Ti or TiN layerdeposited on the structure, followed by a thick aluminum layer 264. Insome embodiments a further TiN layer may be deposited over the aluminumlayer 264.

As shown in FIGS. 4H1 and 4H2, metal stack 260 may be patterned andetched using a suitable metal etch, to define (a) a pair of aluminum TFRheads 270A and 270B on opposing ends of the TFR module 214 and (b) analuminum contact 272 coupled to device contact 252. As shown in FIG.4H2, a bottom surface of each aluminum TFR head 270A and 270B contactsat least one TFR element ridge 218 and a respective pair of TFR contacts254, to thereby define a conductive path between TFR heads 270A and 270Bvia TFR contacts 254A-254D and TFR element 216.

FIG. 4H2 also shows that the metal etch may remove a partial verticalthickness (or in another embodiment, a full thickness) of the TFRdielectric cap region 212.

FIGS. 4I1 and 4I2 show the structure at the same point in the process asFIGS. 4H1 and 4H2, but the cross-section shown in FIG. 4I2 is takenthrough one of the TFR element ridges 218, as opposed to thecross-section shown in FIG. 4H2 taken through an interior location ofTFR element 216. As shown in FIG. 4I2, the metal etch may also remove apartial or full thickness of the respective TFR element ridge 218 in the“y” direction, indicated at 218A along a partial or full length of therespective TFR element ridge 218 in the “x” direction. In theillustrated embodiment, the TFR element ridge 218 shown in cross-sectionI-I (as well as the matching TFR element ridge 218 on the opposite sideof the TFR module 214) is reduced by the metal etch from a thickness y1to a reduced thickness y2, along the x-direction length of the ridge 218except for the portions 218B covered by aluminum TFR heads 270A and270B.

FIGS. 4J1 and 4J2 show the structure at the same point in the process asFIGS. 4H1/4H2 and 4I1/4I2, but wherein the cross-section shown in FIG.4J2 is taken through line J-J extending through the TFR element ridge218 at one longitudinal end of TFR element 216. As shown in thecross-sectional view, TFR contacts 254A and 254B penetrate through theTFR element ridge 218 to define areas of surface contact between (a)lateral surfaces of each TFR contact 254A and 254B and TFR element ridge218, and also between (b) lateral surfaces of each TFR contact 254A and254B and horizontally-extending bottom region 219 of TFR element 216(more clearly shown in FIG. 4H2). These areas of contact between TFRcontact 254 and TFR element 216 increase the conductive path betweeneach TFR head 270A and 270B and TFR element 216, which may therebyimprove the performance of TFR module 214, e.g., particularly in highcurrent applications.

The invention claimed is:
 1. A thin film resistor (TFR) module,comprising: a TFR element including a laterally-extending TFR elementportion and a vertical TFR ridge extending upwardly from thelaterally-extending TFR element portion, the laterally-extending TFRelement portion and vertical TFR ridge defining a continuous, contiguousTFR element formed from the same material; a conductive TFR contactextending through the vertical TFR ridge, wherein the conductive TFRcontact is wider than the vertical TFR ridge in a lateral direction,such that only a partial circumference of an outer surface of theconductive TFR contact is in contact with the vertical TFR ridge; a pairof TFR heads formed over the TFR element, wherein a first TFR head isformed in contact with the conductive TFR contact, to thereby define aconductive path from the first TFR head to the TFR element via the TFRcontact.
 2. The TFR module of claim 1, wherein a height of a firstportion of the vertical TFR ridge in a direction extending upwardly fromthe laterally-extending TFR element portion is greater than a height ofa second portion of the vertical TFR ridge.
 3. The TFR module of claim2, wherein the conductive TFR contact extends through the first portionof the vertical TFR ridge having the greater height than the secondportion of the vertical TFR ridge.
 4. The TFR module of claim 2,wherein: the first portion of the vertical TFR ridge extends upwardlyfrom a first perimeter side of the laterally-extending TFR elementportion, and the the second portion of the vertical TFR ridge extendsupwardly from a second perimeter side of the laterally-extending TFRelement portion.
 5. The TFR module of claim 1, wherein the pair of TFRheads comprise aluminum.
 6. The TFR module of claim 1, wherein theconductive TFR contact is located beneath the first TFR head.
 7. The TFRmodule of claim 1, wherein the conductive TFR contact extends below theTFR element.
 8. The TFR module of claim 1, wherein the vertical TFRridge extends upwardly from multiple perimeter edges of thelaterally-extending TFR element portion.
 9. The TFR module of claim 1,wherein the conductive TFR contact includes: at least one side surfacein contact with the upwardly extending vertical TFR ridge; and a topsurface in contact with the first TFR head; wherein the conductive TFRcontact increases a conductivity between the TFR element and the firstTFR head.
 10. The TFR module of claim 1, wherein the conductive TFRcontact comprises tungsten.
 11. The TFR module of claim 1, wherein theTFR element comprises SiCr or SiCCr.
 12. The TFR module of claim 1,comprising multiple conductive TFR contacts in direct contact with thefirst TFR head and spaced apart from each other.
 13. The TFR module ofclaim 1, wherein a pair of outer surface areas of the conductive TFRcontact spaced apart from each other in a direction around thecircumference of the conductive TFR contact outer surface are in contactwith the vertical TFR ridge, and areas between the pair of outer surfaceareas of the conductive TFR contact in the direction around thecircumference of the conductive TFR contact outer surface are not incontact with the vertical TFR ridge.
 14. A thin film resistor (TFR)module, comprising: a TFR element including: a laterally-extending TFRelement portion having an outer perimeter; and a vertical TFR ridgeextending upwardly from the outer perimeter of the laterally-extendingTFR element portion, the laterally-extending TFR element portion andvertical TFR ridge defining a continuous, contiguous TFR element formedfrom the same material; a conductive TFR contact extending verticallythrough the vertical TFR ridge; a pair of TFR heads formed over the TFRelement, wherein a first TFR head is formed in contact with theconductive TFR contact, to thereby define a conductive path from thefirst TFR head to the TFR element via the TFR contact; wherein thevertical TFR ridge has a pair of end portions, each located below arespective one of the TFR heads; wherein a first portion of the verticalTFR ridge located laterally between the pair of end portions of thevertical TFR ridge has a smaller height in an upwardly extendingdirection than a height of each end portion of the vertical TFR ridge.15. A thin film resistor (TFR) module, comprising: a TFR elementincluding a laterally-extending TFR element portion and a vertical TFRridge extending upwardly from the laterally-extending TFR elementportion, the laterally-extending TFR element portion and vertical TFRridge defining a continuous, contiguous TFR element formed from the samematerial and having a maximum TFR vertical height extending from abottom surface of the laterally-extending TFR element portion to a topsurface of the vertical TFR ridge; a conductive TFR contact extendingthrough the vertical TFR ridge and below the bottom surface of thelaterally-extending TFR element portion, and having a TFR contact bottomsurface contacting an underlying structure located below and verticallyspaced apart from the laterally-extending TFR element portion, such thata vertical height of the conductive TFR contact is greater than themaximum TFR vertical height; a pair of TFR heads formed over the TFRelement, wherein a first TFR head is formed in contact with theconductive TFR contact, to thereby define a conductive path from thefirst TFR head to the TFR element via the TFR contact.
 16. The TFRmodule of claim 15, wherein the TFR contact bottom surface of theconductive TFR contact contacts an inert or non-conductive underlyingstructure located below and vertically spaced apart from thelaterally-extending TFR element portion.
 17. The TFR module of claim 15,wherein the TFR contact bottom surface of the conductive TFR contactcontacts a conductive underlying structure located below and verticallyspaced apart from the laterally-extending TFR element portion, such thatthe conductive underlying structure is conductively connected to the TFRelement via the conductive TFR contact.
 18. The TFR module of claim 15,wherein the conductive TFR contact is wider than the vertical TFR ridgein a lateral direction, such that only a partial circumference of anouter surface of the conductive TFR contact is in contact with thevertical TFR ridge.
 19. The TFR module of claim 15, wherein a verticalheight of a first portion of the vertical TFR ridge extending upwardlyfrom a first perimeter side of the laterally-extending TFR elementportion is greater than a vertical height of a second portion of thevertical TFR ridge upwardly from a second perimeter side of thelaterally-extending TFR element portion.
 20. The TFR module of claim 15,wherein the conductive TFR contact includes: at least one side surfacein contact with the upwardly extending vertical TFR ridge; and a topsurface in contact with the first TFR head; wherein the conductive TFRcontact increases a conductivity between the TFR element and the firstTFR head.